【摘要】 GaN具有禁带宽、热导率高等特点,广泛应用于光电子和微电子器件领域。Si衬底GaN基材料及器件的研制将进一步促进GaN基器件与传统器件工艺的集成,因而具有很高的研究价值。介绍了Si衬底GaN基材料生长及特性方面的研究现状和GaN基器件的进展情况。更多还原

【Abstract】 Gallium nitride has been widely used in optoelectronic and microelectronic devices field because of its large, direct bandgap, high thermal stability, etc. The study of GaN-based semiconductor material and device grown on Si substrate allows future integration of GaN devices with the mature Si-based devices and technology. The investigation to the growth of GaN on Si and related quality characterization and the development of GaN-based device are summarized.更多还原