节点文献
利用DPVBi的空穴阻挡和发光特性而制作的白光器件
White Light Devices Fabricated by Using DPVBi Hole Block and Luminous Characters
【摘要】 介绍了结构为:ITO/m-MTDATA(40 nm)/NPB(5 nm)/DPVBi(10~12 nm)/Rubrene(0.5 nm)/DPVBi(20~18 nm)/Alq(50 nm)/LiF(0.5 nm)/Al的白光器件。该器件采用了两个DPVBi层中间夹一个Rubrene的薄层,这种结构充分利用了DPVBi的空穴阻挡特性和发光特性,有力地平衡了来自于DPVBi的蓝光、Alq的绿光和Rubrene的黄光,从而使器件发射性能较好的白光。当第一层的DPVBi和第二层的DPVBi的厚度分别是11 nm和19 nm时,其他层的厚度保持不变,该器件在15 V电压下,最大亮度为11 290 cd/m2,对应的效率为1.71 cd/A,色坐标为(0.25,0.27),属于白光发射;在6 V时,其最大效率为3.18 cd/A。
【Abstract】 White light devices with structures of ITO/m-MTDATA(40nm)/NPB(5nm)/DPVBi(1012nm)/Rubrene(0.5nm)/DPVBi(2018nm)/Alq(50nm)/LiF(0.5nm)/Al have been introduced.The device uses two DPVBi layers to clamp a Rubrene thin layer.Such structure takes full advantage of the DPVBi hole block and luminous characters,so it keeps good balance of the blue light from DPVBi,the green light from Alq and the yellow light from Rubrene.Thus the device can emit white light of a better performance.When thicknesses of the first layer and the second layer DPVBi are 11nm and 19nm respectively,and thicknesses of other layers keep unchanged.The device’s maximum brightness is 11290cd/m2,corresponding to an efficiency of 1.71cd/A at the voltage of 15V and color coordinates for(0.25,0.27).And its maximum efficiency is 3.18cd/A at the voltage of 6V.
- 【文献出处】 半导体光电 ,Semiconductor Optoelectronics , 编辑部邮箱 ,2006年06期
- 【分类号】TN25
- 【被引频次】6
- 【下载频次】84