【摘要】 从理论上分析了键合热应力产生的原因,在此基础上,采用双层条状金属热应力模型讨论InP/Si键合过程中应力的大小及分布情况。结果表明,由剪切应力和晶片弯矩决定的界面正应力是晶片中心区域大面积键合失败的主要原因,同时InP/Si键合合适的退火温度应该在250~300℃。最后在300℃退火条件下很好地实现了InP/Si键合,界面几乎没有气泡,有效键合面积超过90%。更多还原

【Abstract】 By using bimetal strip stresse model,interfacial thermal stresse distribution and value in InP/Si wafer bonding are theoretically investigated.The results show that interfacial normal stresses play an improtant role in bonding defeat at wafer center area,and the proper annealing temperature for InP/Si bonding is between 230～300℃.Finally,InP wafer is successfully bonded to Si substrate under 300℃ annealing temperature.No voids are observed from the infrared image,the virtual bonding area is above 90%.更多还原