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复合结构半导体电极的最大光电势和光腐蚀研究
Largest Photovoltage and Photoetch of Tandem Semiconductive Electrode
【摘要】 借助于交流阻抗技术和电化学方法,研究了不同复合结构半导体电极在理论上的最大光电势,为更好地提高光电转换效率提供依据。尝试在高氯酸锂-乙腈非水体系中添加氧化-还原电对,探索抑制光腐蚀的有效途径。
【Abstract】 The flat-potential of different tandem semiconductive anode can be acquired by means of alternating impedance technique and electrochemical method.So the largest theoretical photovoltage was achieved to offer primary data for optimizing the preparative parameter.The photocorrosion can be inhibited effectively when dissolving different oxidation-reduction electrocouple in lithium perchlorate-acetonitrile non-aqueous solution.The results indicate that the tandem semiconductive material with narrower band-gap covered with that of wider band-gap can avoid or inhibit the photoetch.
【关键词】 复合结构半导体;
光腐蚀;
交流阻抗;
平带电势;
【Key words】 tandem semiconductor; photoetch; alternating impedance; flat-potential;
【Key words】 tandem semiconductor; photoetch; alternating impedance; flat-potential;
- 【文献出处】 半导体光电 ,Semiconductor Optoelectronics , 编辑部邮箱 ,2006年01期
- 【分类号】TN303
- 【被引频次】2
- 【下载频次】376