【摘要】 以工业V2 O5为原料 ,采用热分解法和还原法制备工业VO2 薄膜。研究了制备工艺参数对电阻突变的影响及其在自然放置条件下的稳定性。结果表明 :1)VO2 薄膜的电阻突变达到了 2 .0～ 3.4个数量级 ,突变温度约为 35℃ ,比纯VO2 薄膜突变温度约低 33℃ ;2 )石英玻璃上的VO2 薄膜的电阻突变数量级比普通玻璃上的大 ;3)H2 还原法制备的VO2 薄膜电阻突变数量级比N2 热分解法制备的大 ;4)在自然放置条件下短时间内VO2 薄膜可承受连续、反复多次的电阻突变 ,其突变数量级降低不多 ,突变温度滞后几乎没有变化 ;5 )同等条件下石英玻璃上的VO2 薄膜的电阻突变数量级降低较小、稳定性较好更多还原

【Abstract】 Industrial VO 2 crystal thin films are produced through thermal decomposition method and reduction method with industrial V 2O 5 as raw material. The suddenly changing properties of VO 2 thin films’ resistance were tested. The effects of preparation technological parameters on suddenly changing of VO 2 thin films’ resistance and its stability at natural condition were studied. The results show that: 1)The suddenly changing of VO 2 thin films’ resistance reaches 2.0～3.4 order of magnitude, and the temperature of its suddenly changing is about 35℃, which is lower 33℃ than that of pure VO 2 thin film; 2)the order of magnitude of suddenly changing of the VO 2 thin films’ resistance on quartz glass are larger than those on ordinary glass; 3)the order of magnitude of suddenly changing of the VO 2 thin films’ resistance by H 2 reduction method are larger than those by N 2 thermal decomposition method; 4)VO 2 thin films can undergo continuous and repeat the M-S phase transition at natural conditions and in short time, decreasing of order of magnitude of suddenly changing is less, and temperature hysteresis of suddenly changing do not nearly vary; 5)under the same conditions the decreasing of order of magnitude of suddenly changing of VO 2 thin films’ resistance on quartz glass is less, and its stability is better.更多还原