【摘要】 用四点弯曲法测量了GaAs晶体断裂模数 ,其结果表明加工方法是影响GaAs晶体断裂模数测量值的重要因素。切割加工的GaAs晶体的断裂模数最低 ,研磨加工GaAs晶体的断裂模数其次 ,机械抛光的断裂模数再其次 ,而机械抛光后再化学抛光的GaAs晶体的断裂模数平均值最高 ,其平均值约为 135MPa。光学加工表面损伤层及损伤层中的缺陷、裂纹和应力将导致GaAs晶体的断裂模数值下降。更多还原

【Abstract】 The measurement results of modulus of rupture for GaAs window crystals by four point bending method show that the effect of optical processing on the modulus of rupture of GaAs is great. The average value of modulus of rupture for GaAs cut samples is the lowest, the average value of modulus of rupture for GaAs lapped samples is larger than that of the cut samples, and the average value of modulus of rupture for GaAs optical polished samples is larger than that of the lapped samples. When the optical polished samples were chemical polished, the average value of modulus of rupture for GaAs chemical polished samples is the highest with the value about 125 MPa. The damaged layer of GaAs samples due to optical machining, and defects, fine cracks and residual stresses in the damaged layer also lead to the decreasing of modulus of rupture of GaAs.更多还原