【摘要】 铟广泛应用于光电器件的封装互连中。这是因为铟独特的性质能够满足光电器件 ,尤其是能满足红外器件封装时对互连材料的要求 :低互连温度 ,低温工作条件下良好的机械性能。研究铟的组织和性能间的关系十分重要 ,但是在室温时用常规的金相方法获得铟真实的原始组织却很困难 ,常规的金相方法通常会获得假相。因为室温下的铟处于它的热加工区域 ,常规的金相制样过程会导致铟的动态回复和再结晶。用扫描电镜的EBSP技术直接观察按真实工艺步骤沉积的铟的原始组织 ,发现铟以多晶态存在 ,平均晶粒尺寸为 1.2 6 μm ,并且在 9μm×9μm局部范围内没有织构存在 ;铟的纳米硬度是 19.73MPa。更多还原

【Abstract】 Indium is widely used in photoelectric component packaging because indium unique characteristics can meet the interconnection requirement for packaging photoelectric component and especially for packaging infrared component. Packaging materials must interconnect component at low temperature and possess the excellent mechanical properties at cryogenic temperature. The indium mechanical properties depend on its microstructure. But obtaining indium original microstructure is very difficult because the usual metallographical method will result in pseudo microstructure. Even at room temperature indium′s holomogous temperature is 0.7 T m, and thus indium is in its hot working region, normal metallographical method will lead to indium restoring and recrystallizing. Therefore EBSP technique of SEM is employed to observe the original microstructure of indium sputtered as true deposition process. It is found that indium exists as polycrystalline, and its average grain size is 1.26 μm, and there is not texture in 9 μm×9 μm local area. Nano hardness of indium is 19.73 MPa.更多还原