【摘要】 研究了以三甲基镓 (TMGa)和氨 (NH3 )为气源物质 ,以氢气 (H2 )为载气进行GaN半导体的金属有机物气相外延 (MOVPE)生长时 ,NH3 分解率对于GaN半导体外延生长的成分空间的影响。热力学计算结果表明 :随着NH3分解率的提高 ,用于生长GaN外延层的气 +固两相区逐渐向高Ⅴ /Ⅲ比方向变小 ,解释了实际生长过程中Ⅴ /Ⅲ比要求很高的原因。预计高的Ⅴ /Ⅲ比及低的NH3 分解率有助于GaN的MOVPE外延生长。更多还原

【Abstract】 The effect of NH 3 pyrolysis rate on the composition region necessary to grow GaN epilayer was studied thermodynamically with the trimethyl gallium (Ga(CH 3) 3) and the ammonia (NH 3) as the source gases and the hydrogen (H 2) as the carrier gas for MOVPE process. The results indicated that the gas +nitride two phase region essential for the growth of GaN epilayer becomes narrowed as the increase of NH 3 pyrolysis rate. This explained the high value of Ⅴ/Ⅲ ratio during the practical growth process. This analysis also implied that the high Ⅴ/Ⅲ ratio and the low NH 3 pyrolysis rate might possibly facilitate the MOVPE growth of GaN epitaxy layer.更多还原