【摘要】 对颗粒碳化硅在温度范围 145 7- 1675K下的氧化性能进行了研究。发现采用沉降曲线法获得的粒度数据遵循对数统计分布 ;从等温样品增重测量得到的相对重量比的数据与使用计算机模拟得到的最佳速度常数相吻合更多还原

【Abstract】 The Oxidation behavior of SiC is a property of essential importance for the use of this material in the high-temperature range.The oxidation behaviour of particulate SiC′ has been studied in the temperature of 1475-1675K in this paper.The particle size date obtained by the sedigraph method has been found to follow the logarithmic statistical distrbution.The relative mass ratio date obtained from the isothermal mass-gain measurements were fitted using a computer simulation to get the best of the rate constant.更多还原