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Rb₃C₆₀单晶薄膜制备及Rb)3C₆₀/C₆₀相界面稳定性研究

Preparation of Rb₃C₆₀ Single Crystal Film and Stability of Rb₃C₆₀/C₆₀ Interface

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【作者】陈晓；李宏年；吴太权；张建华；庄友谊；吴悦；鲍世宁；李海洋；徐亚伯；钱海杰；刘风琴；易·奎热西；

【Author】 Chen Xiao,Li Hongnian,Wu Taiquan,Zhang Jianhua,Zhuang Youyi,Wu Yue,Bao Shining,Li Haiyang,Xu Yabo (Department of Physics,Zhejiang University,Hangzhou,310027,China) Qian Haijie,Liu Fengqin,Kurash Ibrahim (National Laboratory of Synchrotron Radiation,Aca

【机构】浙江大学物理系；中国科学院高能物理研究所同步辐射实验室；中国科学院高能物理研究所同步辐射实验室杭?；

【摘要】通过控制蒸发源电流、源和样品间距及扩散时间 ,室温下在C60 单晶 (111)解理面上制备出Rb3 C60 。用低温同步辐射角分辨光电子谱测量了样品的能带结构。观察到的能带色散表明样品为单晶薄膜。用X光电子谱首次研究了Rb3 C60 与C60相界面的稳定性。结果表明温度低于约 4 2 0K时界面是稳定的更多还原

【Abstract】 Rb 3C 60 thin film was prepared on the (111) surface of C 60 single crystal.The energy band structure of the sample was measured at low temperature using the synchrotron radiation photoemission spectrum technique.The observed band dispersion revealed that the sample was Rb 3C 60 single crystal film.The stability of the interface between Rb 3C 60 and C 60 was studied for the first time by X ray photoelectron spectroscopy.The result showed that the interface was stable below about 420 K.更多还原