【摘要】 利用基于高斯基函数的非限制Hartree Fock Roothaan (UHFR)方法 ,研究球型量子点的剩余电子填充效应 ,量子点的三维限制势采用了有限深势阱 .我们主要考虑量子点内电子相互作用 ,对于试探波函数中高斯基函数 ,采用了简化计算的两参数法 ,在此球型量子点中 ,可以得到类原子的剩余电子填充的壳层结构 .更多还原

【Abstract】 The unrestricted Hartree Fock Roothaan (UHFR) method based on the Gaussian basis is used to study the excess electron filling effects in spherical quantum dots, which is confined in three dimensional potential of finite depth. The electron electron interaction is mainly considered, and the two parameter method is used. This kind of quantum dot shows the shell structure of excess electron filling.更多还原