【摘要】 应用溶胶 -凝胶 (Sol- Gel)工艺制备了组分为 r(Ba∶ Sr) =0 .6 5∶ 0 .35的 BST薄膜 ,研究了 BST薄膜的显微结构、介电特性和漏电流特性 ,实验结果表明 :BST薄膜经 6 5 0°C热处理后 ,已形成完整的立方钙钛矿结构 ,薄膜经 90 0°C热处理后 ,其表面光滑、致密、无裂纹、无针孔 ,圆球形的小颗粒均匀分布。当偏置电压为 0时 ,BST薄膜的介电常数和损耗因子分别为 5 4 2和 0 .0 35。漏电流特性分析结果表明 :采用 Ru O2 作为底电极 ,在 1.5 V的偏压下 BST薄膜的漏电流密度为 0 .5 2 μΑ/cm2 ,该值比 Pt/Ru O2 混合底电极上制备的 BST薄膜的漏电流密度 (72 n A/cm2 )大 1个数量级 ,因此 ,Pt/Ru O2 混合底电极既克服了 Ru O2 底电极漏电流大的缺点 ,又解决了 Pt底电极难以刻蚀的困难 ,是制备大规模动态随机存取存储器的电容器列阵的最佳底电极材料更多还原

【Abstract】 BST thin films are prepared by Sol Gel method.The phase structure and microstructure of BST thin films are studied by XRD,SEM.The results show that cubic perovskite phase structure has formed perfectly after the BST films are fired at 650 °C.The film surface densifies and pores decrease with the increase of heating temperature.At 900 °C,the film surface becomes smooth,free of cracks and pores,and the spherical grains distribute uniformly.The dielectric constant and dissipation factor of the 0 1 μm BST thin films on Pt/RuO 2 bottom electrodes were 542 and 0 035 at zero bias voltage.The leakage current density of BST thin films on RuO 2 bottom electrodes was 0 52 μA/cm 2 at 1 5 V which was about one order of magnitude higher than leakage current density(72 nA/cm 2 at 1 5 V)of BST capacitor with Pt/RuO 2 bottom electrodes.Therefore,the Pt/RuO 2 hybrid bottom electrodes overcome the difficulty in fine patterning of thick Pt and the weakness of higher leakage current of BST thin films spin coated on RuO 2 bottom electrodes.It can be the best choice to prepare the capacitors arrays of ultralarge scale dynamic random access memories(DRAMs)更多还原