【摘要】 对采用 Sol- Gel法制备的钇掺杂锆钛酸铅铁电薄膜的电性能进行了研究。实验结果表明 ,由于钇离子(Y3+ )的引入造成晶格畸变 ,使掺钇后的 PZT铁电薄膜比未掺钇时具有更大的剩余极化强度、更小的矫顽场和漏电流。此外 ,钇掺杂锆钛酸铅铁电薄膜具有良好的介电性能 ,在室温和 10 k Hz频率下 ,其介电常数和介电损耗分别为 4 37和 0 .0 4 3更多还原

【Abstract】 The electrical properties of Sol Gel derived yttrium modified lead zirconate titanate ferroelectric thin films were studied.Experimental results show that PZT ferroelectric thin films doped with yttrium have good ferroelectric characteristics than that of undoped PZT thin films.The reason for this phenomenon was lattice distortion caused by Y 3+ implantation.It was also observed that these thin films have fine dielectric properties.The dielectric constant and loss tangent are about 437 and 0.043,respectively,at room temperature and 10 kHz.更多还原