【摘要】 MESFET管的大信号建模是设计宽带混合微波集成功率放大器的基础 ,半经验模型方法是适于CAD技术的建模方法之一。在分析Curtice半经验模型的基础上 ,对GaAsMESFET管的漏源电流Ids(t)和夹断电压Vp(t)进行修正 ,提出了改进的Curtice模型 ,采用快速模拟退火算法求解。实验结果说明改进的Curtice模型的理论计算值与实例结果吻合很好。更多还原

【Abstract】 Large-signal modeling of an MESFET tube is the basis for designing wideband hybrid microwave integrated power amplifier. The semiempirical method is one of modeling methods suitable for CAD technology. This paper puts forward an improved Curtice model, by modify drain-source current I ds (t) and breakout volage V p(t) of GaAs MESFET tube on the basis of Curtice semiexpirical model, and uses fast simulated annealing algorithm to resolve it. The experimental result agrees closely with numerical results.更多还原