【摘要】 采用共溅射方法制备了 Cu-In合金膜 ,并讨论了 Cu-In合金膜的结构、电学性能以及溅射时间对 Cu-In合金膜的结构及电学性能的影响 .结果显示 ,Cu-In合金膜仅有单峰 ,多晶晶面间距不随着膜厚的增加而改变 .用费 -桑理论对 Cu-In合金薄膜的电学性质进行了分析 ,临界厚度的讨论结果表明 ,溅射 3～ 4min是面电阻的转变点 ,而电学参数分析也给出相同的结果更多还原

【Abstract】 The thin films of Cu In binary alloy have been prepared on glass substrate by means of d.c co sputtering techniques.Their microstructure and electric property are analyzed with X ray diffraction (XRD) and Hall effect measurement,respectively.The influence of sputtering time on the structure and electric property of the films is also discussed.The results show that a strongly preferential oriented polycrystalline grain exists and the distance of plans does not change with the thickness of the films.Fuchs Sondheimer theory is employ to elucidate the variation of sheet resistance.There is a critical thichness for sheet resistivity.更多还原