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氧气氛低温退火Pt/Ba0.8Sr0.2TiO3Pt引起的低频介电弛豫效应
The low-frequency dielectric relaxation in Pt/Ba0.8Sr0.2TiO3/Pt thin film capacitors post annealed at low temperatures in oxygen ambient
【摘要】 研究了在不同温度区间氧气氛和氮气氛退火后处理对Pt Ba0 .8Sr0 .2 TiO3 Pt介电特性的影响 .经过高温 5 5 0℃氮气退火处理后 ,再放入 35 0℃的氧气中退火 ,发现样品的介电特性出现了非常明显的低频弛豫现象 ,并且这种低频弛豫现象在 35 0℃的氮气中退火后将会消失 .通过在出现低频弛豫现象的样品的上下电极加一偏压 ,可以发现低频弛豫现象更加明显 ,并且在撤消偏压后这种增强将会逐渐减弱 ,直至最终恢复到偏压前的弛豫状态
【Abstract】 Obvious dielectric relaxation in the low frequency region were found after the as deposited Pt/BST/Pt capacitors were first post annealed in nitrogen at 550℃ and next in oxygen at 350℃. Moreover, such a low frequency dielectric relaxation disappeared after a third time post annealing in nitrogen at 350℃. The dielectric relaxation was both enhanced with negative or positive dc bias and reduced slowly to the original state after the dc bias was turned off.
【基金】 江苏省青年科技基金 (批准号 :BQ980 3 7)资助的课题~~
- 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2002年12期
- 【分类号】O484.43
- 【被引频次】4
- 【下载频次】61