【摘要】 为了对稳定硅表面进行广泛的搜索 ,利用低能电子衍射 (LEED)研究了 1 3个散布在极射投影三角内各处的高指数硅表面 :Si(1 0　 4　 1 3 ) ,(6　 2　 7) ,(8　 4　 1 1 ) ,(4　 1　 1 0 ) ,(2　 1　 5 ) ,(5　 1　 1 0 ) ,(5　 2　 1 0 ) ,(5　 1　5 ) ,(5　 1　 6 ) ,(4　 0　 5 ) ,(1 2　 4　 1 9) ,(1 2　 3　 1 4 )和 (1 2　 3　 1 6 ) .结果发现这些清洁的硅表面都不稳定 ,因为在被充分退火后 ,它们会彻底小面化成为分属一个或几个稳定表面的小面 .提出了一套行之有效的方法 ,使小面化表面的复杂LEED图得以可靠地标定 ,进而确定了全部出现的稳定表面的指数 .除已知的Si(1 5　 3　 2 3 )外 ,还发现三个新的稳定表面 ,即Si(2 0　 4　 2 3 ) ,(3　 1　 4 )和 (3　 1　 7) .同时也粗略地确定了它们的家族领地更多还原

【Abstract】 In order to make a thorough study on all possible stable silicon surfaces, we have studied, by means of low energy electron diffraction (LEED), 13 clean high index silicon surfaces scattered widely in the stereographic triangle: Si(10\ 4\ 13), (6\ 2\ 7), (8\ 4\ 11), (4\ 1\ 10), (2\ 1\ 5), (5\ 1\ 10), (5\ 2\ 10), (5\ 1\ 5), (5\ 1\ 6), (4\ 0\ 5), (12\ 4\ 19), (12\ 3\ 14), and (12\ 3\ 16). It turns out that all these surfaces are unstable, meaning that after being well annealed they will facet completely to facets of one or more stable surfaces. An effective method has been proposed so that complicated LEED patterns like those of these faceted surfaces can be identified with confidence. As a result, three new stable surfaces, that is, Si(20\ 4\ 23), (3\ 1\ 4), and (3\ 1\ 7) have been found, and their family territories along with that of Si(15\ 3\ 23) have been roughly determined.更多还原