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溶胶-凝胶VO₂薄膜转换特性研究

Switching property of sol-gel vanadium oxide thin films

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【Author】 Yuan Ning\|Yi 1)2) Li Jin\|Hua 1) Lin Chen\|Lu 2) 1) (Laboratory of Functional Materials, Deptartment of Information Science, Jiangsu Institute of Petrochemical Technology, Changzhou\ 213016,China) 2) (State Key La

【机构】江苏石油化工学院信息科学系功能材料实验室；中国科学院上海冶金研究所信息功能材料国家重点实验室常州213016中国科学院上海冶金研究所信息功能材料国家重点实验室；上海200050；常州213016；上海200050；

【摘要】利用溶胶凝胶法在SiO2 Si衬底上沉积高取向的V2 O5薄膜 ,在压强低于 2Pa ,温度高于 40 0℃的条件下 ,对V2 O5薄膜进行真空烘烤 ,获得了电阻率变化 3个数量级以上、弛豫宽度为 6 2℃的VO2 多晶薄膜 .以X射线衍射(XRD)、扫描电子显微镜 (SEM)图和电阻率转换特性等实验结果为依据 ,详细分析了溶胶凝胶薄膜在真空烘烤时从V2 O5向VO2 的转化 ,它经历了从VnO2n +1 (n =2 ,3,4,6 )到VO2 的过程 .实验证明 ,根据选择合适的成膜热处理条件和真空烘烤条件是实现溶胶凝胶V2 O5结构向VO2 结构成功转换的关键更多还原

【Abstract】 V 2O 5 thin films with preferred orientation were prepared by the sol gel method on SiO 2/Si substrate. When baked at temperatures higher than 400℃ and pressures lower than 2Pa, the V 2O 5 thin film can be converted to a VO 2 thin film with property of resistance change larger than 3 orders, and a 6 2℃ in hysteresis width. Meanwhile the transition process from V 2O 5 to VO 2 was discussed in detail. It was confirmed that the key factors to obtain a VO 2 thin film with a good switching property were the conditions of pre heating and vacuum baking of the V 2O 5 thin film.更多还原