【摘要】 采用多元芯片方法获得了一系列不同离子注入剂量的GaAs AlGaAs非对称耦合量子阱单元 ,通过光致荧光谱测量 ,研究了单纯的离子注入导致的界面混合效应 .荧光光谱行为与有效质量理论计算研究表明 ,Al原子在异质结界面的扩散在离子注入过程中已基本完成 ,而热退火作用主要是去除无辐射复合中心 .更多还原

【Abstract】 The intermixing induced by ion-implantation on a series of comparable asymmetrical-coupled GaAs/AlGaAs quantum-well samples have been studied by photoluminescence(PL) spectra measurements. The results of the PL spectra and the calculation based on effective mass approximation theory show that the proton implantation is the dominate process for Al diffusion across the heterointerfaces. The main effect of rapid thermal annealing is to remove the non-radiative centre.更多还原