【摘要】 报道了生长SiC单晶的PVT法生长工艺,研究了晶体生长温度、温度梯度、生长室压力、杂质等因素对晶体生长和晶体质量的影响,确定出合理的工艺条件,生长出φ45mmSiC单晶.X射线衍射表明,生长的单晶为6H多型结构,通过腐蚀法得到晶体中微管道密度约为103cm-2,位错密度约为104～105cm-2.测试了SiC单晶的半导体特性,结果表明:晶体为n型,电阻率约300Ω·cm,迁移率90cm2V-1S-1,载流子浓度在1014cm-3量级.更多还原

【Abstract】 The growth process of large SiC single crystals by PVT method was reported. The influences of growth temperature, temperature gradient, the pressure in the growth chamber and impurity on the crystal growth and its quality were investigated. The large 6H-SiC single crystal with diameter of 45mm was successfully grown under optimum process conditions. The densities of micropipe and dislocation were ca. 103cm-2 and 104 - 105cm-2 respectively observed through chemical etching technique. The crystal was n-type semiconductor, the carrier concentration and electron mobility were 1014cm-3 and 90cm2V-1S-1 respectively.更多还原