节点文献

掺杂SnO2透明导电薄膜电学及光学性能研究

Electrical and Optical Properties of Transparent and Conductive Sb-Doped SnO2 Films

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 郭玉忠王剑华黄瑞安王贵青

【Author】 GUO Yu-Zhong, WANG Jian-Hua, HUANG Rui-An, WANG Gui-Qing (Novel Materials Preparation & Processing Provincial Laboratory, Kunming University of Science & Tech-nology, Kunming 650093, China)

【机构】 昆明理工大学新材料制备与加工省重点实验室昆明理工大学新材料制备与加工省重点实验室 昆明 650093昆明 650093昆明 650093

【摘要】 通过实验测量 sol-gel工艺制备的 Sb掺杂 SnO2薄膜载流子浓度、迁移率、电阻率、膜厚,紫外-可见光区透射率、反射率等性质,详细研究了Sb掺杂SnO2薄膜电学与光学性能.实验发现,薄膜具有良好的透光性和较高导电性,膜内载流子浓度高达1020cm-3,电阻率~10-2Ω·cm,透光率高达 90%,SnO2膜禁带宽度 Eg=37~3.80eV.

【Abstract】 Based on the measurement and analysis of carier concentration ne, mobility ue, electrical resistivity ρ, film thickness d, refractive index n, transmittance T(λ ) and reflectivity R(λ ) in ultraviolet-visible range, the eletrical and optical behaviours of Sb-doped SnO2 thin films derived by sol-gel processing were investigated. The experimental data show that the SnO2 thin films derived by the sol-gel processing have favourable electrical conductivity and transmittance in visible light range, in which n-type carrier concentration ne reachs to 1020cm-3, electrical resistivity ρ -10-2 Ω .cm, transmittance T -90%, as well as forbiden band gap Eg = 3.7 -3.8eV.

【基金】 国家科委重点科技攻关项目(96-119-04-01-05)
  • 【文献出处】 无机材料学报 ,Journal of Inorganic Materials , 编辑部邮箱 ,2002年01期
  • 【分类号】TB383
  • 【被引频次】113
  • 【下载频次】714
节点文献中: 

本文链接的文献网络图示:

本文的引文网络