【摘要】 对埋藏式单晶硅波导基槽进行了反应离子刻蚀的研究 ,介绍氟化物反应离子刻蚀机理 .对CF4 和SF6气体在不同工艺条件下的刻蚀速率及刻蚀效果进行了分析 ,总结出刻蚀优化工艺条件 ,解决了刻蚀中存在的工艺难题 .试验表明 ,在CF4 加O2 的优化工艺条件下 ,其刻蚀具有良好的各向异性和较高的重复性 ,获得了良好的刻蚀效果更多还原

【Abstract】 The study is conducted on reactive ion etching(RIE) of buried monocrytalline silicon wave guide base trough. The mechanism of fluoride RIE is introduced in the paper. Etching velocity and etching effect are analysed in different technology condition with CF 4 and SF 6. Etching optimization technology condition is summarized and problems of etching technology are solved. The experiment indicates that there are excellent anisotropy, high reproducibility and good etching effect by using CF 4 and O 2 etching in the optimization technology condition.更多还原