节点文献
集成CMOS行波放大器的设计和仿真
Design and Simulation of Integrated CMOS Traveling-Wave Amplifier
【摘要】 采用有耗片内螺旋电感和 0 .1 8μm CMOS工艺对集成行波放大器进行了设计 ,其仿真增益在 1 4GHz的频带内大于 1 5 d B.仿真了有耗片内螺旋电感的分布参数对放大器增益的影响 ,该仿真结果对放大器的设计和优化具有很好的指导作用 .
【Abstract】 A traveling-wave amplifier (TWA) with lossy transmission line was discussed. An integrated CMOS TWA with lossy on-chip spiral inductor was designed with 0.18 μm CMOS process, the simulated gain is over 15 dB on 14 GHz bandwidth. Besides, the gain of TWA versus the distributed parameters of lossy on-chip spiral inductor was simulated, and the simulated results have some guideline to the optimizing design of TWA.
【关键词】 微波集成电路;
行波放大器;
增益;
片内螺旋电感;
【Key words】 microwave integrated circuit; traveling-wave amplifier (TWA); gain; on-chip spiral inductor;
【Key words】 microwave integrated circuit; traveling-wave amplifier (TWA); gain; on-chip spiral inductor;
【基金】 国家“九五”重点科技攻关项目 (97-773 -0 4-0 1(5 ) )
- 【文献出处】 上海交通大学学报 ,Journal of Shanghai Jiaotong University , 编辑部邮箱 ,2002年12期
- 【分类号】TN722
- 【被引频次】4
- 【下载频次】102