【摘要】 提出了一种用于集成电路内部的过热保护电路 .采用 0 .6 μm n阱互补金属氧化物半导体 (CMOS)工艺的spectre仿真结果表明 ,此电路对因电源电压、工艺参数变化而引起的过热保护阈值点漂移有很强的抑制能力 .通过引入反馈的方法解决了过热保护电路中热振荡带来的危害更多还原

【Abstract】 A new thermal shutdown circuit is presented. Spectre simulation with 0.6 μm n well CMOS technology shows that the circuit has excellent ability of power rejection and process insensitive. A feedback is also used to solve the problem of thermal oscillation.更多还原