【摘要】 在利用MOCVD方法制备的调制掺杂GaAs/AlGaAs多量子阱超晶格材料中 ,由于深能级杂质形成的非辐射复合中心的存在 ,使样品具有较大的暗电流并削弱了该材料的光致发光强度 .样品经过氢等离子体处理后 ,其光电性质明显改善更多还原

【Abstract】 In the GaAs/AlGaAs MQW super lattices grown by MOCVD, the existence of deep energy level of produced by non radiation recombination centers makes samples have large dark current and weak photoluminescence. The electrical and optical properties can be obviously improved for the samples after H + treatment.更多还原