节点文献
化学机械抛光(CMP)技术的发展、应用及存在问题
Advances and Problems on Chemical Mechanical Polishing
【摘要】 在亚微米半导体制造中 ,器件互连结构的平坦化正越来越广泛采用化学机械抛光 (CMP)技术 ,这几乎是目前唯一的可以提供在整个硅圆晶片上全面平坦化的工艺技术。本文综述了化学机械抛光的基本工作原理、发展状况及存在问题
【Abstract】 Chemical mechanical polishing(CMP) has become widely accepted for the planarization of device interconnect structures in deep submicron semiconductor manufacturing At present, it is the only technique known to provide global planarization within the whole wafers The progress and problem of CMP are reviewed in the paper
- 【文献出处】 润滑与密封 ,Lubrication Engineering , 编辑部邮箱 ,2002年04期
- 【分类号】TN305
- 【被引频次】153
- 【下载频次】1953