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a面白宝石单晶的温度梯度法生长及缺陷的研究
Defect Study of a-Plane Sapphire Grown by TGT
【摘要】 用温度梯度法 (TGT)生长出了高质量的a面 (11 2 0 )白宝石单晶。通过化学腐蚀和光学显微镜研究了晶体内部的位错分布及其密度的大小 ,同时应用高分辨X射线四圆衍射法测定了晶体内部的完整性
【Abstract】 High quality a plane (11 20) sapphire was grown by the temperature gradient technique (TGT).Chemical corrosion was used to the slices cut from various parts of the sapphire crystal.The distributing and density of etch pits were observed under a Leitz microscope.The lattice integrality of sapphire crystal was investigated by high resolution X ray diffraction.
- 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2002年04期
- 【分类号】O782
- 【被引频次】9
- 【下载频次】174