【摘要】 利用强脉冲 X射线对 Si-Si O2 界面进行了辐照 ,测量了 C-V曲线和 I-V曲线。实验发现 ,经过强脉冲 X射线对 Si-Si O2 界面进行的辐照 ,使 C-V曲线产生了正向漂移 ,这一点与低剂量率辐射结果不同 ;辐射后 ,感生 I-V曲线产生畸变 ;特别地 ,从 I-V曲线上还反映出强脉冲 X射线辐照的总剂量效应造成电特性参数明显退化 ,最后甚至失效。讨论了强脉冲 X射线辐照对 Si-Si O2 界面产生损伤的机理 ,并对实验结果进行了解释更多还原

【Abstract】 Intense pulse X ray is used to irradiate Si SiO 2 interface. C V curves and I V curves are tested before and after X ray irradiation. Experiment results show that C V curves have the following changes under intense pulse X ray irradiation: (1) Flatband Voltage of high frequency C V has a little positive drift, sodoes the gate voltage in depletion region, which is different from a negative drift under low power pulse X ray irradiation; (2) Oxide capacitance of low and high frequency C V lift after intense pulse X ray irradiation; (3) Minimum capacitance of high frequency C V lifts after intense pulse X ray irradiation. Experiment results also show that slopes of I V subthreshold curves have gradually aberrant under six times intense pulse X ray irradiation. One reason is that intense pulse X ray irradiation increases density of interface trap D it , thus changes the I V curve slopes. I V curves show that accumulated dose of intense pulse X ray causes deteriorative electric characters of Si SiO 2.更多还原