【摘要】 简要论述了集成电路的发展和特大规模集成电路中部份硅生产工艺技术近几年的发展趋势。特大规模集成电路仍然朝着较大直径的硅单晶片和较小的特征尺寸方向发展。当特大规模集成电路特征尺寸在 0 .1μm以下时 ,角度限制散射投影电子束光刻和极紫外线光刻以及离子投影光刻等光刻技术是较佳候选者。离子注入掺杂技术将向高能量与低能量离子注入领域发展。淀积可靠耐用的 Ti N薄膜阻挡层是下一步溅射工艺的发展目标。集成电路的生产将向自动化方向发展更多还原

【Abstract】 The development of ULSI and the trend of some key technologies for Si semiconductor materials and IC processes are briefly described in the paper The ULSI is still developing towards larger diameter Si wafers and smaller feature sizes For feature sizes below 0 1 μm, scattering angular limitation projection electron beam lithography, extreme ultraviolet lithography and ion projection lithography will be better candidates for ULSI process technology Implantation technology will be towards higher and lower energy Deposition of reliable and durable TiN films as barrier layers is the next target for development of the sputtering technology The manufacture of IC’s will be developing towards automation production更多还原