【摘要】 Nd:YAG连续激光辐照在表面蒸有Zn薄膜的n-InP片上,用激光诱导的方法实现Zn在InP中掺杂。形成PN结。用电化学C-V方法和扫描电子显微镜对辐照后的样品进行分析研究,给出激光辐照功率、辐照时间等工艺参数对结深、浓度分布影响.在n-InP片表面得到受主浓度分布均匀、高掺杂（～1019cm-3）、浅结（～1μm）的P-InP。初步分析其掺杂机理是激光诱导下所形成的合金结过程。更多还原

【Abstract】 Nd:YAG continuous laser was used to irradiate the n-InP substrates which wore vapoured Zn film on the samples surface. The doping of Zn into InP was achieved by the method of Nd: YAG continuous laser inducing doping, and the PN junctions were obtained. The samples, which were irradiated, were studied with an Electrochemical C-V profiler and Scanning Electron Microscope (SEM). The relation of performance parameters of PN junctions such as the depth of the junctions, the distribution of the doping concentration and the irradiation time, the irradiation power are presented . The experimental results show that the acceptor concentration of uniform distribution, shallow junction (-1 μm), and heavy doping concentration is attained (-1019cm-3). The primary mechanism of Zn doping is assumed that alloy junctions came to being with the laser irradiating.更多还原