【摘要】 利用准分子激光干涉结晶法使a Si∶H/a SiNx∶H多层膜中的超薄a Si∶H层定域晶化 ,成功地制备出三维有序分布的nc Si阵列。原子力显微镜 (AFM )、微区拉曼 (micro Raman)光谱及剖面透射电子显微镜 (X TEM)的分析结果揭示在晶化薄膜中已形成平均尺寸约为 3 6nm ,横向周期 2 μm ,纵向周期与a Si∶H/a SiNx∶H多层膜周期 (14nm)相等的nc Si阵列。更多还原

【Abstract】 A new method of phase-modulated excimer laser crystallization to fabricate the three-dimensional nc-Si array within the a-Si∶H/a-SiN x∶H multilayers (MLs) is adopted. The results of atomic force microscopy (AFM), micro-Raman measurements and cross-section transmission electron microscopy (X-TEM) demonstrated that the crystallized sample shows a three-dimensional ordered structure of nc-Si with the average size of about 3.6 nm, which has longitudinal order with 14 nm periodicity confined by SiN x sublayers in the MLs, and lateral order with 2 μm periodicity by patterned local crystallization.更多还原