【摘要】 通过低压金属有机化学气相外延 (LP MOVPE)工艺生长了AlGaInAs应变补偿量子阱材料 ,通过X射线双晶衍射、光荧光、二次离子质谱的测试分析得到了材料生长的优化工艺参数 ,降低了材料中的氧杂质含量 ,得到了高质量AlGaInAs应变补偿量子阱材料 ,室温光致发光半宽FWHM =2 6meV。采用此外延材料成功制作了 1 3μm无致冷AlGaInAs应变量子阱激光器 ,器件测试结果为 :激射波长 :12 90nm≤ λ≤ 1330nm ;阈值电流 :Ith(2 5℃ )≤15mA ;Ith(85℃ )≤ 2 5mA ;量子效率变化 :Δηex(2 5～ 85℃ )≤ 1 0dB。更多还原

【Abstract】 AlGaInAs strain-compensated quantum wells have been grown by LP-MOVPE. By X-ray diffraction, photoluminescence and SIMS, the properties of the materials and the oxygen concentration in AlGaInAs materials are analyzed. A high quality (PL FWHM=26 meV: room temperature) AlGaInAs strain-compensated quantum well through optimized MOVPE process is obtained. By the wafers, the 1.3 μm uncooled AlGaInAs strain-compensated quantum well lasers have been fabricated. The results of the laser chips are: 1290 nm≤λ≤1330 nm, I th(25℃)≤15 mA, I th(85℃)≤25 mA and Δη ex(25～85℃)≤1.0 dB.更多还原