【摘要】 在直流负偏压１２０Ｖ作用下利用射频溅射和光刻剥离技术在ＩｎＧａＡｓＰ/ＩｎＰ双异质结结构外延片表面淀积１１０ｎｍ厚、宽为２μｍ的Ｗ０．９５Ｎｉ０．０５金属薄膜应变条．实验测得Ｗ０．９５Ｎｉ０．０５金属薄膜应变条边缘单位长度产生９７×１０５ｄｙｎ//ｃｍ压应变力．在这样压应变力作用下,Ｗ０．９５Ｎｉ０．０５金属薄膜应变条下ＩｎＧａＡｓＰ/ＩｎＰ双异质结结构内０．２~２μｍ深度范围内形成的条形波导的导波强度为１．５×１０ ３至１．７×１０－１与由Ｗ和ＳｉＯ２应变薄膜所形成的光弹波导及其光弹光电子器件相比较,由Ｗ０．９５Ｎｉ０．０５金属薄膜应变条形成的光弹效应波导结构在平面型光电子器件中有着更重要的实际应用．更多还原

【Abstract】 Deposition of 110-nm-thick, 2-μm-wide W0.95Ni0.05 metal thin film strain stripes on InGaAsP/InP heterostruc-ture wafer was carried out by using both rf sputtering with the samples under a negative dc bias of 120V and a photoresist lift-off technique. The compressive strainedge force per unit length of W0.95Ni0.05 metal thin-film stripes measured in the authors’ experiments is 9. 7 × 10 dyn/cm. The strength of the stress-induced stripe waveguides is 1. 5 × 10-3- 1. 7 × 10-1 at depth range of 0. 2 - 2μm in InGaAsP/InP double heterostructures beneath W0.95Ni0.05 metal thin-film strain stripes. Compared with the photoelastic waveguides and photoelastic optoelectronic devices induced by W and SiO2 strain thin films, there are more important applications in the fabrication of planar optoelectronic devices using photoelastic waveguide structures induced by W0.95Ni0. 05 metal thin film strain stripes.更多还原