【摘要】 利用自行研制的InGaN GaNSQW蓝光LED芯片和YAG :Ge3 + 荧光粉制作了高亮度白光LED(Φ3) ,并对其发光强度、色度坐标、I V、色温及显色性等特性进行了研究 .实验结果表明 :室温下 ,正向电流为 2 0mA时 ,白光LED的轴向发光强度为 1 1～ 2 3cd ,正向电压小于 3 5V ,色度坐标为 (0 2 8,0 34) ,显色指数约为 70 .更多还原

【Abstract】 High brightness white light emitting diodes(Φ3) were fabricated by using the self produced InGaN?GaN blue LED chip and YAG:Ce 3+ fluorescence. The luminous intensity, chromaticity coordinate, I V, color temperature and color rendering index were studied. The experiment result shows that in room temperature, at forward current 20mA, luminous intensity of the white LED is from 1.1cd to 2.3cd, when forward current is under 3.5V, the chromaticity coordinate is (0.28,0.34), and the color rendering index is about 70.更多还原