【摘要】 研究了（Co,Nb,Pr）掺杂的SnO₂材料介电和压敏性质.当Pr₆O₁1的量分数从0％增加到0.1％时,SnO₂压敏电阻的相对介电常数从670降到280,击穿电压从827V/mm猛增到2 150V/mm.微观结构分析发现:当Pr₆O₁1的量分数从0％增加到0.1％时,SnO₂的晶粒尺寸由4.50μm迅速减小到1.76μm.晶界势垒高度测量揭示SnO₂的晶粒尺寸迅速减小是介电常数迅速减小及击穿电压急剧增高的原因.对Pr增加引起SnO₂晶粒减小的根源也进行了解释.更多还原

【Abstract】 The effect of rare - earth Pr on the dielectric and varistor properties of the(Co, Nb, Pr) -doped SnO2 was investigated. The relative dielectric constant of the SnO2 based varistors decreased from 670 to 280 and the breakdown voltage increased significantly from 827V/mm to 2150V/mm with increasing Pr6O11 concentration from 0% to 0.1%. Measurement of the barrier height at grain boundaries reveal that the significant decrease of the SnO2 grain size, from 4.50 to 1.76μm with increasing Pr6O11 concentration from 0% to 0.1%, is the reason for lowering the dielectric constant and raising the breakdown voltage. The origin for the deduction of SnO2 grain size with increasing Pr6O11 concentration was explained.更多还原