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n型半导化TiO2压敏陶瓷的导电机制

Conducting Mechanism of Semiconducting n-TiO2 Varistor Ceramics

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【作者】 周方桥梁鸿东丁志文陈志雄庄严

【Author】 ZHOU Fang-qiao, LIANG Hong-dong, ZHUANG Yan, DING Zhi-wen, CHEN Zhi-xiong(Laboratory of Solid Physics in Physical Institute and Material Stuely, Guangzhou University, Guangzhou 510405, China;Guangzhou Sunrise Electronic LTD, Guangzhou 510335, China)

【机构】 广州大学理学院固体物理与材料研究实验室广州新日电子有限公司 广州 510405广州 510405广州 510335

【摘要】 分析了n型半导化TiO2压敏陶瓷中晶粒间界处的受主态性质,得出为晶界受主态的能级是多级化的;利用晶界平衡热电子发射势垒模型,合理地解释了该材料的I-V非线性特征;从理论上推导出了非线性系数α正比于晶界电压,且与晶界受主态的分布函数有密切关系.

【Abstract】 An analysis based on property of the acceptors at grain boundaries of semiconducting n- TiO2 varistor ceramic and the distribution with multi energy levels were considered in this paper. The I-V nonlinear characteristic of the ceramics was explained reasonably by thermo - electron emission model of grain boundary barrier. The relation of nonlinear coefficient a in proportion to the voltage at grain boundary was induced theoretically, and related to distributing function of acceptor state density in the grain boundary.

【关键词】 TiO2陶瓷压敏电阻半导体
【Key words】 TiO2 ceramicvaristorsemiconductor.
【基金】 广州市教育局资助项目(01-2)
  • 【文献出处】 哈尔滨理工大学学报 ,Journal of Harbin University of Science and Technology , 编辑部邮箱 ,2002年06期
  • 【分类号】TQ174
  • 【被引频次】6
  • 【下载频次】146
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