【摘要】 介绍用脉冲电子束烧蚀法在不同温度的单晶硅 (1 1 0 )衬底上沉积铌酸锂铁电薄膜 ,以及用脉冲电子束进行薄膜晶化处理的实验结果 ;使用扫描电子显微镜 (SEM)、X射线衍射 (XRD)、光电子能谱 (XPS)等方法 ,对薄膜的成份、晶体结构及表面形貌进行分析测试。采用表面轮廓仪测定 LN薄膜的膜厚分布均匀性等。文中探讨了靶材料烧蚀和沉积过程中出现的诸多现象。研究表明 ,这种薄膜制备方法有许多独特之处 ,随着该项技术的不断改进和发展 ,将为光电集成电路提供一种新工艺和新技术更多还原

【Abstract】 A new approach of preparation of ferroelectrics LiNbO 3 thin film is described The pseudospark electron beams with nanosecond duration can be used for film deposition through the interaction of beam and target to cause rapid melting, vaporization and explosion of target materials, and nucleation and crystallization of ablated target cluster with similar ratio of components occur on the surface of substrates Physical processes of the ablation and deposition of this new technology have been investigated The observation of high resolution electron microscopy, X ray diffraction, photo electronic energy spectroscopy have been presented Some experimental results of the preparation of Ferroelectrics LiNbO 3 thin film are presented in this paper Experimental results show that such a new approach of film deposition with wide application possesses some unique advantages更多还原