【摘要】 采用自制的液相金属氧化物化学汽相沉积 (LP MOCVD)设备 ,在Ge( 1 0 0 )向 ( 1 1 0 )面偏 9°外延生长出GaAs单晶外延层 ,对电池材料进行了X射线衍射测试分析 ,半峰宽为 5 2″ 讨论了外延生长参量对GaAs/Ge的影响 ,表明抑制反向畴不仅与过渡层有关 ,而且与GaAs单晶外延生长参量有关 适当的生长速率可有效地抑制反向畴的生长更多还原

【Abstract】 GaAs/Ge heterostructrue has been obtained on a home made low pressure MOCVD system.The crystal quality of the GaAs epi layer was studied by the double rystal X ray diffractometer.The morphology was studied,too.Results indicate that only proper growth rate for the GaAs epi layer will give anti phase domain free and better morphology GaAs epi layer on Ge substrate miscut 9 degrees towards the (110).更多还原