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用热丝CVD技术制备场发射冷阴极金刚石薄膜(英文)
GROWING DIAMOND FILMS FOR FIELD EMISSION COLD CATHODE IN HOT FILAMENT CVD
【摘要】 以甲烷和氢气的混合气体为原料 ,用热丝化学汽相淀积法 ,在 ( 1 0 0 )硅衬底上 80 0℃温度时异质生长出适合场发射的金刚石薄膜 .然后用扫描电子显微镜、X射线衍射仪、透射电子显微镜和喇曼光谱仪等对其进行了分析 ,结果表明 ,所制备的薄膜是多晶金刚石 ,而且在 ( 1 1 1 )晶相择优生长 .在扫描电子显微镜下 ( 1 1 1 )晶粒的外形几乎都是四面体结构 ,具有很多尖端 ,可以加强一定电压下的电场 ,所以所制备的薄膜能够满足低压场发射的要求
【Abstract】 Diamond films for field emission are prepared heterogeneously on (100)-oriented Si substrates in hot filament chemical vapor deposition(HFCVD) process,raw materials are a gas mixture of methane and hydrogen,and substrate temperature is lower than 800℃.Characterizations of the films grown in this way are measured by means of scanning electron microscopy (SEM),X-ray diffraction (XRD),transmission electron microscopy (TEM) and Raman spectroscopy.The results show that the films are polycrystalline and grown preferably in (111) crystal orientation.The shapes of (111) grains are seen to possess tips in SEM micrograph,so the films are fit for field emission.
【Key words】 Diamond films; Field emission; HFCVD; Characterizations analysis;
- 【文献出处】 光子学报 ,Acta Photonica Sinica , 编辑部邮箱 ,2002年04期
- 【分类号】TN304.055
- 【被引频次】10
- 【下载频次】100