【摘要】 采用配有 dc- N plasma N源的分子束外延 (MBE)技术在 Ga As衬底上生长制作了工作波长为 1 ,3 μm的 Ga In NAs量子阱 RCE探测器 .采用传输矩阵法对器件结构进行优化 .吸收区由三个 Ga In NAs量子阱构成 ,并用湿法刻蚀和聚酰亚胺对器件进行隔离 .在零偏压下 ,器件最大的量子效率为 1 2 %,半峰值全宽 (FWHM)为 5 .8nm,3 d B带宽为 3 0 MHz,暗电流为 2× 1 0 - 11A.通过对 MBE生长条件和器件结构的优化 ,将进一步提高该器件的性能 .更多还原

【Abstract】 A 1.3μm GaInNAs resonant cavity enhanced (RCE) photodetector (PD) has been grown by molecular beam epitaxy(MBE) monolithically on (100) GaAs substrate using a home-made ion-removed dc-plasma cell as nitrogen source.A transfer matrix method was used to optimize the device structure.The absorption region is composed of three GaInNAs quantum wells separated by GaAs layers.Devices were isolated by etching 130μm-diameter mesas and filling polyamide into grooves.The maximal quantum efficiency of the device is about 12% at 1.293μm.Full width at half maximum (FWHM) is 5.8nm and 3dB bandwidth is 304MHz.Dark current is 2×10 -11 A at zero bias voltage.Further improvement of the performance of the RCE PD can be obtained by optimizing of the structure design and MBE growth conditions.更多还原