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GaN衬底材料LiGaO₂晶体的温度梯度法生长及分析

Growth of LiGaO₂ as a Substrate of GaN by Temperature Gradient Technique

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【Author】 Yang Weiqiao Gan Fuxi Deng Peizhen Zhou Yongzong Xu Jun Li Shuzhi Jiang Chengyong (Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences, Shanghai 201800)

【机构】中国科学院上海光学精密机械研究所；中国科学院上海光学精密机械研究所上海201800；上海201800；

【摘要】以温度梯度法生长LiGaO2 晶体 ,通过形貌观察、X射线衍射分析和X射线光电子能谱分析确认在样品的中部形成了单一相的LiGaO2 晶体。但在生长过程中由于CO气体的存在 ,熔体表面形成了LiO 和金属态的Ga,钼坩埚被侵蚀形成Li2 MoO4 进入熔体 ,使样品上下两部分的结晶质量变差。更多还原

【Abstract】 The growth of LiGaO 2 by temperature gradient technique (TGT) is reported. Through topographic observing, X ray diffraction analysis and X ray photoelectron spectroscopy analysis, it is found that the single phase crystal LiGaO 2 is formed in the middle of the sample. Owing to the existence of CO,LiO - and Ga is formed on the surface of melt during growth, then Li 2MoO 4 is formed in the melt due to Mo crucible is eroded by LiO - and Ga, the crystallization degraded at the upper and lower parts of the sample.更多还原