【摘要】 采用固体三氧化二硼 ,在单晶硅 (10 0 )衬底上用微波CVD法生长金刚石薄膜和进行 p型掺杂 ,对不同掺杂碳源浓度下CVD金刚石薄膜的掺杂和生长行为、薄膜表面形貌、薄膜的电性能等进行了研究 .结果表明 ,硼确实已掺入金刚石膜中 ;在SEM下观察到硼掺杂金刚石膜结构致密没有孔洞 ;用Ti和Ag分别在掺杂金刚石薄膜表面制备电极 ,测试了在不同温度下电流随温度的变化。更多还原

【Abstract】 Boron doped diamond thin films are grown by microwave CVD method. The dopant is solid B 2O 3,which locates in a round groove on the sample holder. The research is concerned of the CVD diamond growth condition, the film morphology and their electrical properties. It is showed that boron has been incorporated into the diamond films. Ti and Ag electrodes are made on doped film surfaces respectively, the current passed through the two electrodes is measured at different temperaturs.更多还原