【摘要】 文章给出了光电子材料InP的 ( 10 0 )和 ( 111)晶面质谱分析的结果 ,对 ( 10 0 )晶面做了光荧光分析。在 30 0和 77K温度下测量了 ( 10 0 )晶面的电子浓度及电子迁移率。研究表明玷污主要来自硅更多还原

【Abstract】 The mass spectrum analysis of crystal face (100) and (111) and the photoluminescence analysis of crystal face (100) in the photoelectronic material InP were given.The Hall coefficient,charge carrier concentration and Hall mobility were determined.Experimental results indicate that the pollution of silicon is predominant.更多还原