【摘要】 在 n+ -Si衬底上用磁控溅射淀积掺 Er氧化硅 (Si O2 :Er)薄膜和掺 Er富硅氧化硅 (Six O2 :Er,x>1 )薄膜 ,薄膜经适当温度退火后 ,蒸上电极 ,形成发光二极管 (LED)。室温下在大于 4V反偏电压下发射了来自 Er3+的 1 .5 4μm波长的红外光。测量了由 Si O2 :Er/n+ -Si样品和 Six O2 :Er/n+ -Si样品分别制成的两种 LED,其 Er3+1 .5 4μm波长的电致发光峰强度 ,后者明显比前者强。还发现电致发光强度与 Si O2 :Er/n+ -Si样品和 Six O2 :Er/n+ -Si样品的退火温度有一定依赖关系更多还原

【Abstract】 Er doped SiO 2(SiO 2:Er)films and Er doped Si x O 2(Si x O 2:Er, x >1)films were deposited on n + Si substrate by magnetron sputtering technique. After these films were annealed at proper temperatures, the electrodes were evaporated on the front and back, respectively, of SiO 2/n + Si samples and Si x O 2/n + Si samples, thus light emitting diodes(LEDs) were fabricated. The LEDs emitted 1.54 μm wavelength light from Er 3+ under the reverse biases higher than 4 V at room temperature. The Er 3+ 1.54 μm electroluminescence(EL) intensity from Si x O 2/n + Si LEDs was more intense than that of SiO 2/n + Si LEDs. And that intensity depends on annealing temperature of SiO 2/n + Si samples and Si x O 2/n + Si samples.更多还原