【摘要】 提出了一种分析和了解微波功率 Ga As MESFET非线性效应的方法。主要是采用解析优化方法 ,提取 MESFET器件在不同偏置点下的本征元件 ,并结合器件的应用类型 ,对本征元件与偏置的关系进行了系统化的分析。分析的结论有助于提高微波功率 Ga As MESFET器件设计和应用的准确性更多还原

【Abstract】 A method of analyzing and understanding of microwave power GaAs MESFET’s nonlinear effects is presented.The systematic analyses of the relation of intrinsic elements with biasings are completed by extracting intrinsic elements of MESFET device under different biasings with analytical optimal approach combining with the kinds of device application.The conclusions of the analyses are helpful to improve the accuracy of design and application of microwave power GaAs MESFET device.更多还原