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自由电子能带中的平均键能与费米能级
Average-bond-energy and Fermi Level on Free Electronic Band
【摘要】 根据半导体自由电子能带模型 ,文中在面心立方 (fcc)晶体、体心立方 (bcc)晶体和 6角密堆积 (hcp)晶体中研究自由电子能带的平均键能 Em 和费米能级 EF 的关系 ,并得出自由电子能带的平均键能 Em 相当于费米能级 EF 的研究结果。其结果有助于了解平均键能 Em 的物理实质 ,同时也为自由电子系统提供一种通过自由电子能带计算费米能级 EF(或费米半径 k F)的方法
【Abstract】 Based on the free electronic band model, we study the relationship between average bond energy E m and Fermi level E F in face centered cubic (fcc) crystal, body centered cubic (bcc) crystal and hexagonal closed packed structure (hcp) crystal. It is concluded that the average bond energy E m is equivalent to the Fermi level E F on free electronic band. The results may help to understand the physical conception of average bond energy E m and also supply a method to calculate the Fermi level E F or Fermi radius k F by electronic band calculation for free electronic system.
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solia State Electronics , 编辑部邮箱 ,2002年01期
- 【分类号】O472
- 【被引频次】3
- 【下载频次】536