【摘要】 通过应用一种新的模型来进行电学测试和参数提取,可以获取SIMOX(离子束注入隔离氧化层)SOI圆片的上界面和下界面的界面态参数以及埋氧层的质量参数。传统的MOS电容结构测试电学特性应用到SOI圆片是有其局限性的,在本实验中直接利用SOI圆片的SIS(Silicon-Insulator-Silicon)结构,将SOI圆片的无损电学表征方法应用到实际的表征当中去。实验采用自行制备的低剂量超薄SIMOXSOI圆片,得到了比较可靠的实验结果。更多还原

【Abstract】 SIS(Semiconductor -Insulator -Semicon ductor)capacitors is used to characterize t he elec -trical properties of SIMOX SOI wafer.By introducing a coupling factor,a n MOS -like equivalent circuit is obtained for the SIS capacitor.Therefore the existing measurement te chniques and interface parameter extraction methods for the MOS capac itor can be directly applied to an SIS capacitor.SIMOX SOI wafers produced by ion implant processes we re used in this experiment.The obtained results for SIMOX SOI samples revealed that this method has irrefragable advantage over conventional MOS capacitor structure.更多还原