【摘要】 使用裂缝尖端附近小矩形路径J积分方法计算电子封装分层传播的能量释放率,并在热循环加载下使用高频超声显微镜技术测定了B型和D型两种倒装焊封装在焊点有无断裂时芯片/底充胶界面的分层裂缝扩展速率。由有限元模拟给出的能量释放率和实验测得的裂缝扩展速率得到可作为倒装焊封装可靠性设计依据的Paris半经验方程。更多还原

【Abstract】 The strain energy release rates G we re calculated by employing the J -int egral in a small rectangular path near the crac k tip in the related finite element simulations.And under thermal cycling loading,the crack p ropagation rates of two types of test chip(type B and D)were determined by using C -SAM inspectio n.The Paris half -empirical equatio n,which can be used as a design base of flip chip package reliability,is determined from the energy release rates simulated and the crack propagation rates measured.更多还原