【摘要】 对用LEO技术生长GaN材料的选择生长和横向生长速率进行了实验研究。结果表明,作为LEO生长基板的GaN层的表面质量是实现选择生长的关键,而图形方向对横向生长速率与纵向生长速率之比(L/V)也有重要的影响。通过选择合适的工艺条件,实现了GaN材料的LEO外延生长,所得样品的X射线衍射峰宽比用常规MOCVD法生长的样品减小了1/3。更多还原

【Abstract】 The lateral epitaxy overgrowth (LEO) of GaN was studied experimentally. In order to realize the selective area growth, the surface of the GaN layers grown by conventional MOCVD used as the substrate for LEO must be smooth enough and with perfect crystallographic plane.And the lateral growth rate is dependent strongly on the direction of the mask layer. By using the proper growth process, the GaN samples grown by LEO were successfully obtained. The X-ray diffraction peak width (FWHM) for the LEO samples is 1/3 less than that of the samples grown by conventional MOCVD.更多还原