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电沉积AlxGa1-xAs薄膜及性能研究

Study on co-electrodeposition of tri-compound AlxGa1-xAs films

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【作者】 韩爱珍; 王喜莲; 高元凯;

【Author】 HAN Ai-zhen, WANG Xi-lian, GAO Yuan-kai(Harbin Institute of Technology, Harbin 150001, China)

【机构】 哈尔滨工业大学; 哈尔滨工业大学 哈尔滨150001; 哈尔滨150001; 哈尔滨150001;

【摘要】 利用电共沉积技术,在简单盐和带有络合剂的盐酸溶液中,制备了AlxGa1-xAs三元化合物薄膜。用能谱分析仪测量了薄膜成分,分析结果表明,该膜为符合化学计量比的三元化合物AlxGa1-xAs半导体材料,用分光光度计对膜进行测量,在较宽光波波段获得一定的透射率。

【Abstract】 Tri-compound AlxGa1-xAs films was prepared by using electrodeposition technology in simple salt solution with additives citric acid. The composition of the deposited films was measured by SEM-EDS. The result shows that approximately stoichiometric Al0.3Ga0.7As tri-compound semicon- ductor materials is obtained. As the films are measured by spectrophotometer, certain transmissivity is obtained in a wide range of light wave band.

  • 【文献出处】 功能材料与器件学报 ,Journal of Functional Materials and Devices , 编辑部邮箱 ,2002年01期
  • 【分类号】TN304
  • 【被引频次】1
  • 【下载频次】31
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